EMPLOI D'ELECTRODES AUXILIAIRES POUR L'ANALYSE DES ELEMENTS DE TRANSITION DANS LES VERRES ET SILICES TRES PURS, PAR SPECTROGRAPHIE DE MASSE A ETINCELLESGAUNEAU M.1975; ANALUSIS; FR.; DA. 1975; VOL. 3; NO 7; PP. 368-375; ABS. ANGL.; BIBL. 22 REF.Article

PROFILS D'IMPLANTATION A HAUTE ENERGIE DE BORE DANS LE SILICIUM ET L'ARSENIURE DE GALLIUM, D'ARSENIC DANS LE SILICIUM PAR MICROANALYSE IONIQUE.GAUNEAU M.1977; ANALUSIS; FR.; DA. 1977; VOL. 5; NO 8; PP. 357-365; ABS. ANGL.; BIBL. 22 REF.Article

DETERMINATION DE PROFILS D'IMPLANTATION DE BORE DANS LE SILICIUM OU L'ARSENIURE DE GALLIUM, D'ARSENIC DANS LE SILICIUM A L'AIDE D'UN NOUVEAU MICROANALYSEUR IONIQUE.GAUNEAU M.1976; VIDE; FR.; DA. 1976; VOL. 183; SUPPL.; PP. 186-188; ABS. ANGL.; (MATER. TECHNOL. MICROELECTR. TENDANCES ACTUELLES. COLLOQ. C.R.; MONTPELLIER; 1976)Conference Paper

USE OF IMPLANTED SAMPLES AS STANDARDS IN SPARK-SOURCE MASS SPECTROMETRY WITH APPLICATION TO THE ANALYSIS OF III-V SEMICONDUCTORSGAUNEAU M; RUPERT A; MINIER M et al.1982; ANAL. CHIM. ACTA; ISSN 0003-2670; NLD; DA. 1982; VOL. 135; NO 2; PP. 193-204; BIBL. 15 REF.Article

DIFFUSION OF GALLIUM IN SILICONHARIDOSS S; BENIERE F; GAUNEAU M et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 5833-5837; BIBL. 21 REF.Article

LONG-RANGE ENHANCEMENT OF BORON DIFFUSIVITY INDUCED BY A HIGH-SURFACE-CONCENTRATION PHOSPHORUS DIFFUSIONLECROSNIER D; GAUNEAU M; PAUGAM J et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 3; PP. 224-226; BIBL. 15 REF.Article

DOSAGE DE L'ALUMINIUM PAR SPECTROMETRIE D'ABSORPTION ATOMIQUE ET DIFFRACTION DES RAYONS X DANS DES COUCHES EPITAXIEES PAR JETS MOLECULAIRES DE GA_1-XAL_XASBAUDET M; REGRENY O; DUPAS G et al.1983; MATERIALS RESEARCH BULLETIN; ISSN 0025-5408; USA; DA. 1983; VOL. 18; NO 2; PP. 123-133; ABS. ENG; BIBL. 26 REF.Article

X-ray topography and TEM studies of (Ga,Fe)-double-doped LEC grown InP crystalsHAJI, L; COQUILLE, R; GAUNEAU, M et al.Journal of crystal growth. 1987, Vol 82, Num 3, pp 487-494, issn 0022-0248Article

DOSAGE DE L'ALUMINIUM PAR SPECTROMETRIE D'ABSORPTION ATOMIQUE ET DIFFRACTION DES RAYONS X DANS DES COUCHES EPITAXIEES PAR JETS MOLECULAIRES DE GA_1-XAL_XAS = QUANTITATIVE DETERMINATION OF ALUMINIUM IN GA_1-XAL_XAS EPITAXIAL FILMS OBTAINED BY MOLECULAR BEAMS BY MEANS OF ATOMIC ABSORPTION SPECTROMETRY AND X RAY DIFFRACTIONBAUDET M; REGRENY O; DUPAS G et al.1982; ; FRA; DA. 1982; NT-LAD-ICM/61; 20 P.; 30 CM; BIBL. 25 REF.; NOTE TECHNIQUEReport

CHROMIUM GETTERING IN GAAS BY OXYGEN IMPLANTATIONFAVENNEC PN; GAUNEAU M; L'HARIDON H et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 4; PP. 271-273; BIBL. 10 REF.Article

COLLECTIVE INVESTIGATIONS ON TWO TYPICAL SEMI-INSULATING GAAS INGOTSBONNAFE J; CASTAGNE M; CLERJAUD B et al.1981; MATER. RES. BULL.; ISSN 0025-5408; USA; DA. 1981; VOL. 16; NO 10; PP. 1193-1212; BIBL. 46 REF.Article

Depth profiles of manganese implants in InP after annealingCHAPLAIN, R; GAUNEAU, M; L'HARIDON, H et al.Journal of applied physics. 1985, Vol 58, Num 5, pp 1803-1808, issn 0021-8979Article

Rapport de mission effectuée à Berlin du 7 au 12 Juillet 1985. 7ème Conférence internationale sur les méthodes d'analyse par faisceaux d'ions = Mission report: Berlin 7-12 July 1985. 7th International congress about the ion beams analysis methodGAUNEAU, M.1985, 2 p.Report

Surface accumulation of manganese in Si⁺-implanted and annealed semi-insulating indium phosphideRAO, E. V. K; DUHAMEL, N; GAUNEAU, M et al.Journal of applied physics. 1984, Vol 56, Num 12, pp 3413-3417, issn 0021-8979Article

Rapport de mission aux Etats-Unis du 4 au 18 mai 1983. Participation: «13ème réunion de l'Association Francophone de Spectrométrie de Masse» (Québec), «31th Annual conference on mass spectrometry and allied topics» (Boston) = Mission report, U.S.A, 4-18 May 1983. Participation: «13th conference of French speaking Association on mass spectrometry» (Quebec), «31th Annual conference on mass spectrometry and allied topics» (Boston)GAUNEAU, M.1983, 34 p.Report

Delta-doping in diffusion studiesBENIERE, F; CHAPLAIN, R; GAUNEAU, M et al.Journal de physique. III (Print). 1993, Vol 3, Num 12, pp 2165-2171, issn 1155-4320Article

Characterisation of semi-insulating InP:FeLAMBERT, B; COQUILLE, R; GAUNEAU, M et al.Semiconductor science and technology. 1990, Vol 5, Num 6, pp 616-619, issn 0268-1242, 4 p.Article

Oxygen enhancement induced by ionic implantation in scandium diphthalocyanine thin filmsROBINET, S; GAUNEAU, M; SALVI, M et al.Journal of applied physics. 1990, Vol 68, Num 1, pp 66-69, issn 0021-8979Article

New silicon-related deep broadband luminescence emission in Al_0.3Ga_0.7As epitaxial layersSOUZA, P; RAO, E. V. K; ALEXANDRE, F et al.Journal of applied physics. 1988, Vol 64, Num 1, pp 444-447, issn 0021-8979Article

Préparation et caractérisation de couches minces d'oxynitrure de phosphore destinées à la passivation d'InP = Preparation and characterization of phosphorus oxinitride thin films for InP passivationHBIB, H; BONNAUD, O; QUEMERAIS, A et al.Journal de physique. III (Print). 1996, Vol 6, Num 11, pp 1489-1506, issn 1155-4320Article

Excitation mechanisms of rare earth (Yb) luminescence in III-V semiconductors (InP)LHOMER, C; LAMBERT, B; TOUDIC, Y et al.Semiconductor science and technology. 1991, Vol 6, Num 9, pp 916-923, issn 0268-1242Article

Dopage de films de C₆₀ par implantations ionique doping of C₆₀ films after ion implantationTROUILLAS, P. P; RATIER, B; MOLITON, A et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1994, Vol 70, Num 4, pp 893-904, issn 0958-6644Article

Comparison of electrical and atomic profiles of Mg²⁴ and Zn⁶⁴ implanted GaAs samples and GaAs-GaAlAs heterostructures for bipolar transistor applicationsDUHAMEL, N; DAOUD-KETATA, K; DESCOUTS, B et al.Journal of electronic materials. 1986, Vol 15, Num 6, pp 377-382, issn 0361-5235Article

Further evidence of chromium, manganese, iron, and zinc redistribution in indium phosphide after annealingGAUNEAU, M; CHAPLAIN, R; RUPERT, A et al.Journal of applied physics. 1985, Vol 57, Num 4, pp 1029-1035, issn 0021-8979Article

A composite layer of Al-Er-O particles in a silicon matrixSALVI, M; L'HARIDON, H; FAVENNEC, P. N et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 6, pp 1761-1764, issn 0013-4651Article